Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2728-2730
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical properties of CdTe and Cd1−xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction band is most likely singly ionized Te antisites (Te at Cd sites). The origin of the deep donor level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. Based on this model, the conduction type of CdZnTe crystals is determined by the results of compensation between the shallow donors of Te antisites and the shallow acceptors of Cd vacancies. High resistivity Cd0.9Zn0.1Te crystals are produced by compensating the p-type crystals with indium impurity at a low doping level of 1–5×1015 cm−3. At room temperature, CdZnTe radiation detectors can resolve the six low energy peaks in the 241Am spectrum, a performance comparable to that of the best CdZnTe detectors reported. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1412588
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