Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2740-2742
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality (0001) and (0001¯)-GaN films were grown by plasma-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity. Oxygen doping is controllable, reproducible, and produces low compensation material up to concentrations of at least 1018 cm−3 with higher levels showing significant compensation. Layers containing oxygen at levels above 1022 cm−3 exhibit severe cracking while oxygen concentrations less than 1021 cm−3 do not introduce significant strain. The oxygen incorporation rate has a weak dependence on Ga overpressure during Ga-stable growth but dramatically increases for conditions approaching N-stable growth. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1403276
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