ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Distributed Bragg reflectors based on AlxGa1−xN/GaN multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN templates. The nominal Al composition ranged from 30% to 45%, and the layer thicknesses of the ten-period stack were designed for a target wavelength of 510 nm. Transmission electron microscopy data reveal periodic structures where (Al,Ga)N on the GaN interface is sharper than GaN on the (Al,Ga)N one. X-ray diffraction spectra fitted to a dynamic diffraction simulation model yield an estimate of the layer thicknesses, Al%, and lattice strain. Reflectivity values above 50% at 510 nm have been reproducibly achieved, in very good agreement with the results of the matrix-method simulation. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1401090
