ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented demonstrating continuous 300 K photopumped InP quantum dot (QD) laser operation (656–679 nm) realized by modifying and coupling, via tunneling, an auxiliary InGaP quantum well (QW) to the QDs of an InP–In(AlGa)P–InAlP heterostructure grown by metalorganic chemical vapor deposition. The In0.49Ga0.51P QW coupled to the InP QDs by a thin ((approximately-less-than)20 Å) In0.5Al0.3Ga0.2P barrier overcomes the limitations of carrier collection, lateral transport, and thermalization in the QDs, thus yielding a different form of QD laser. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1405153