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Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001) (2001)

Bowen, M. ; Cros, V. ; Petroff, F. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 1655-1657

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present tunneling experiments on Fe(001)/MgO(20 Å)/FeCo(001) single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on (001)-oriented Fe/amorphous-Al2O3/FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface—Fe(001) in this case—but depends on the actual electronic structure of the entire electrode/barrier system. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1404125

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