Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1228-1230
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown ∼1–420 nm thick epitaxial Co wedges on Ru(0001) with molecular-beam epitaxy at 350 °C and characterized them with atomic force microscopy. A metal-on-metal growth mode was observed where three-dimensional islands (dots) or a flat film network with holes (antidots) in truncated pyramidal shapes exist below or above ∼ 20 nm, respectively. The top of the islands and the rim of the holes are flat with a roughness of ∼0.3 nm, and the lateral sizes of these dots/antidots, ∼102 nm, tend to be uniform. We suggest that this self-assembled growth be mainly driven by strain. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1351522
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