Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 709-711
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Excitation of cylindrical microdischarges, 300–360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200–700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of 700 Torr, the wavelength-integrated (300–800 nm) output power—emitted into a solid angle of ∼6×10−2 sr—of a 360-μm-diam device is 48±1 μW for an operating current and voltage of 5.7±0.1 mA and 134 V, respectively. This hybrid solid state/gas device represents the demonstration of the generation of a gas discharge by a pn junction and lends itself to the fabrication of large arrays. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1345838
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