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Uniaxial dielectric anisotropy in Ba0.5Sr0.5TiO3 films studied by evanescent-probe microscopy (2001)

Wang, Y. G. ; Reeves, M. E.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 3872-3874

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The dielectric permittivity, tunability (Δε/ε), and loss tangent of Ba1−xSrxTiO3 (BST) films grown by pulsed-laser deposition are studied by near-field microwave microscopy. Based on theoretical simulations, a method is developed to measure the uniaxial dielectric anisotropy, ε⊥/ε(parallel), in BST films grown at different oxygen pressures. The measured ε⊥/ε(parallel) decreases with the film-growth oxygen pressure, consistent with the structural anisotropy. The films prepared at 50 mT, with ε⊥(approximate)ε(parallel), have the highest permittivity, tunability, and figure of merit. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1377628

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