Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2922-2924
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ–2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)(parallel)SRO(111)(parallel)MgO(111)(parallel)YSZ(100)(parallel)Si(100); SBT[010](parallel)SRO[01¯1](parallel)MgO[01¯1](parallel)YSZ〈001〉(parallel)Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (Ec) of 76 kV/cm for a maximum applied electric field of 440 kV/cm. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1370984
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
