Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2730-2732
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Eα′, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two different types of paramagnetic centers that are consistent with the experimental spectral features for Eα′. The highly anisotropic symmetry and the isotropic hyperfine coupling constants observed for one of the Eα′- center variants are reproduced by the present model. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1369147
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
