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Conservation of flatband conditions for DySi2 monolayers on n-type Si(111) (2001)

Vandré, S. ; Preinesberger, C. ; Busse, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2012-2014

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We propose a low-resistivity metal/Si/DySi2/Si multilayer Ohmic contact to n-type Si. For a DySi2 monolayer on n-type Si(111), the Fermi level has been found to be located only 0.08 eV below the conduction-band minimum of Si, corresponding to flatband conditions. Here, we demonstrate that this Fermi-level position is conserved to a large extent upon Si overgrowth of the monolayer, allowing us to exploit the flatband conditions for device applications under ambient conditions. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1360782

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