Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1390-1392
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A hydrogenated amorphous silicon field-effect transistor suitable for digital and analog applications is described. The device consists of a p+-i-n− junction, with the drain and source contacts connected to the n− layer and the control gate electrode to the p+ layer. As in the corresponding crystalline junction field-effect transistor, the channel resistivity is modulated by the gate voltage. The selection of the thickness of the intrinsic layer and the doping and thickness of the n layer is critical for correct operation of the device. A device with a well defined triode and saturation region was manufactured. A transconductance of 1.5×10−6 A/V at VDS=25 V was achieved. This value is comparable to that of state-of-the-art thin-film transistors. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1289912
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