Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 842-844
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1306919
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