Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 4335-4337
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured both the diamagnetic shift and the linewidth of an excitonic transition in In0.48Ga0.52P as a function of magnetic field up to 22 T at 4.2 K using photoluminescence spectroscopy. The sample was grown on a GaAs substrate using low-pressure metalorganic vapor phase epitaxy at 700 °C. The substrate was misoriented by 15° from [001] towards [011] direction. We find that the variations of both the diamagnetic shift and the linewidth with magnetic field are about one half of those reported earlier [E. D. Jones, R. P. Schneider, Jr., S. M. Lee, and K. K. Bajaj, Phys. Rev. B 46, 7225 (1992)] in a In0.48Ga0.52P sample grown with only 2° misorientation and also those calculated using a free exciton model. We suggest that this behavior may be due to the fact that our sample was grown with much larger misorietation. We have calculated both of these variations using a model in which we assume that in this sample the hole is completely localized and find an excellent agreement with the observed data. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1334648
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