Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 3556-3558
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We study the phonons of self-assembled InAs/GaAs quantum dots for different coverage thicknesses L. The additional Raman feature detected between the GaAs transverse optical and the InAs longitudinal optical modes, which we assign to phonons of the dots, exhibits an upward frequency shift with L. This shift is attributed to compressive strain in the dots and, on the basis of its dependence on L, we show that these phonons arise from the quantum dots and not from the wetting layer. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1329157
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