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Laser ablation and column formation in silicon under oxygen-rich atmospheres (2000)

Pedraza, A. J. ; Fowlkes, J. D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 3018-3020

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The microstructure formed at the surface of silicon by cumulative pulsed-laser irradiation in oxygen-rich atmospheres consists of an array of microcolumns surrounded by microcanyons and microholes. Formation of SiOx at the exposed surface of silicon is most likely responsible for the occurrence of etching/ablation that causes the continuous deepening of canyons and holes. The growth mechanism of columns that is supported by the experimental evidence presented here is a process in which the columns are fed at their tips by the silicon-rich ablation plasma produced during pulsed-laser irradiation. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1324732

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