Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1994-1996
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Capacitance images responsible for surface depletion were observed on an InAs dot-covered GaAs surface by scanning capacitance microscopy. We performed local capacitance versus bias voltage measurements on quantum dots (QDs) and a wetting layer (WL) as well as conductance versus bias voltage (G–V) measurements. Both results indicate that the surface depletion is more suppressed beneath the QDs than under the WL. In addition, the conventional thermionic equation theory fitted to the measured G–V curves shows that the interface barrier height between the GaAs and the InAs QD increases as the QD size is reduced. We ascribe this result to the influence of the surrounding WL, whose surface Fermi level is strongly pinned at the midgap of the n-GaAs. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1312257
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