Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2256-2258
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30 K. The charge-equivalent noise of the device at 300 K was measured to be ∼4×10−2 e/Hz1/2 at 1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126313
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