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The kinetics and mechanism of scanned probe oxidation of Si (2000)

Snow, E. S. ; Jernigan, G. G. ; Campbell, P. M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1782-1784

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report measurements of the kinetics of scanned probe oxidation under conditions of high humidity and pulsed bias. For a hydrophobic Si surface the oxidation rate for short pulse times (∼10 ms) is controlled by the density of H2O molecules in the ambient humidity surrounding the tip-sample interface. At longer pulse times (∼0.1 s) liquid H2O bridges this interface and the maximum oxidation rate increases by a factor of ∼104 because of the increased density of H2O molecules. We propose that the rate-limiting step of the oxidation process is the production of O anions from the ambient humidity. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126166

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