Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2909-2911
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality Ge epilayers on Si with low threading-dislocation densities were achieved by a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing. On large Si wafers, Ge on Si with threading-dislocation density of 2.3×107 cm−2 was obtained. Combining selective area growth with cyclic thermal annealing produced an average threading-dislocation density of 2.3×106 cm−2.We also demonstrated small mesas of Ge on Si with no threading dislocations. The process described in this letter for making high-quality Ge on Si is uncomplicated and can be easily integrated with standard Si processes. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125187
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