Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2521-2523
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125064
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
