Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2199-2201
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 μm at room temperature. They are grown on GaAs and consist of InAs covered with an InGaAs cap layer. Their density is 2×1010 cm−2 as determined by transmission electron microscopy. Room-temperature photoluminescence shows a 36 meV broad line at 1.3 μm, corresponding to the quantum-dot ground state, with excellent uniformity across the wafer. The efficiency of this emission is reduced only by a factor of 4 with respect to low temperature showing the high quality of the sample. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124963
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