Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2367-2369
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Local high current densities in areas around dislocations with a screw component might be responsible for the observed high leakage currents in GaN-based electronic devices. Using ballistic electron emission microscopy, threading dislocations with a screw component are found to be accompanied by high current densities and low effective Schottky barrier heights. The electronic states responsible for this extremely nonuniform behavior of GaN films are metastable trap states. The experimental results show that acceptor- and donor-like charge traps coexist in the vicinity of dislocations with a screw component. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123853
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |