ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoconductive detectors based on partially ordered AlxGa1−xN alloys with AlN mole fractions up to 45% were fabricated and evaluated. The degree of ordering in these alloys was found to increase with the AlN mole fraction and it has a maximum value at about 50%. The resistivity of the AlxGa1−xN films was found to increase from 10 to 108 Ω cm by increasing the Al content in the films. Correspondingly, the mobility-lifetime (μτ) product, which was determined by measuring the photoconductive gain, was found to decrease from 10−2 to 10−5 cm2/V. These high values of the μτ product at the high AlN mole fraction are attributed to spatial separation and indirect recombination of the photogenerated electron hole pairs, due to band-gap misalignment of the ordered and disordered domains in these films. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123801
