Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1966-1968
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we report on the observation of optically excited stimulated emission of c-GaN layers grown by molecular-beam epitaxy (MBE). Stimulated emission was observed at 1.8 K and room temperature. The threshold intensity for excitation of stimulated emission from our MBE-grown c-GaN layers is significantly lower than that reported for c-GaN grown by metalorganic chemical vapor deposition (MOCVD). The experimental data of optical gain and stimulated emission presented in this letter demonstrate that this material has a good potential for the future realization of cleaved cavity blue light-emitting laser diodes. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123715
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
