Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1367-1369
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a vertical-cavity surface-emitting laser structure optimized for fast intrinsic emission dynamics, using the strain-compensated (GaIn)As/Ga(PAs) material system with a 2λ sin-type cavity. The high quality of the epitaxial growth is revealed by the large normal mode splitting of 10.5 meV found in reflectivity measurements. The fast dynamical response of our structure after femtosecond optical excitation at 30 K yields a pulse width of 3.2 ps and a peak delay of only 4.8 ps. A structure designed for laser emission at higher temperatures exhibits picosecond dynamics at room temperature. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123552
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