Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1424-1426
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
SiC/GaN p-n and n-n heterostructures grown by low pressure chemical vapor deposition were investigated using thermal admittance spectroscopy. Different kinds of defects were isolated and located. Evidence of a distribution of defects at the p-SiC/n-GaN interface is given as having thermal activation energies of (87±3) meV at 5 V and (72±4) meV at 8 V bias. Additionally, three bulk defects with activation energies between 155 and 175 meV were found. By comparison with admittance spectra of the p-type SiC substrate, one level was identified as Al acceptor in SiC, whereas the other defects are electron traps in the GaN layer. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123570
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