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Defect generation and diffusion mechanisms in Al and Al–Cu (1999)

Liu, C.-L. ; Liu, X.-Y. ; Borucki, L. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 34-36

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A defect generation mechanism, namely, the grain-boundary Frenkel pair model, and corresponding diffusion mechanisms during electromigration are developed using atomic simulation techniques in Al and Al–Cu. We contend that large numbers of interstitials and vacancies exist at grain boundaries and both contribute to mass transport. Cu preferentially segregates to the interstitial sites at grain boundaries via a Frenkel pair generation process and reduces the overall grain-boundary diffusivity due to the stronger Al–Cu binding. Predictions from our models are in excellent agreement with available experimental data and observations. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123124

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