Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1206-1208
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The redistribution of iron implanted into the oxide layer of silicon-on-insulator structures has been measured using the secondary ion mass spectroscopy technique after annealing at 900–1050 °C. Iron diffusion has been found to be much faster in the oxide prepared by the separation-byimplantation-of-oxygen (SIMOX) procedure compared to the thermally grown oxide in the bonded and etched-back structures. In the latter case, the Fe diffusivity exhibits a thermal activation with an energy of 2.8 eV, confirming the literature data on silica glass. In the SIMOX oxide, the diffusivity depends only weakly on temperature, indicative of an essentially activation-free diffusion mechanism. Gettering of Fe at below-the-buried-oxide defects in SIMOX wafers has been observed. No iron segregation has been detected at the SiO2–Si interfaces. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122128
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