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Bond-length strain in buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) (1998)

Woicik, J. C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1269-1271

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The bond lengths in a series of strained, buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.© 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122371

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