Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 3857-3859
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In situ reflectance difference spectroscopy (RDS) has been performed during growth and nitrogen-doping of ZnTe thin films fabricated by molecular beam epitaxy. The doping level of the ZnTe samples can be determined by evaluating the RD spectra in the vicinity of the E1 and E1+Δ1 transitions. RDS features in this spectral range were used to optimize online the doping performance of the N-plasma cell. Furthermore, doping-induced surface processes have been investigated, like surface saturation with activated N species and surface Fermi level pinning occurring at ambient pressure. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122916
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