Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 220-222
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
SrCu2O2 thin films were prepared on SiO2 glass substrates by pulsed laser deposition. The film deposited in O2 atmosphere of 7×10−4 Pa at 573 K showed high optical transmission in visible and near-infrared regions. Potassium was doped at Sr site for substitutional doping. The optical band gap of the K-doped film was estimated to be ∼3.3 eV. The dc electrical conductivity of the K-doped film at 300 K was 4.8×10−2 S cm−1 and the activation energy was 0.10 eV. Positive sign of Seebeck and Hall coefficients demonstrated the p-type conduction of the film. Hole concentration and mobility at 300 K were 6.1×1017 cm−3 and 0.46 cm2 V−1 s−1, respectively. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121761
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