Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2000-2002
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman spectra from p-type GaN have been systematically studied in the hole density range of 5×1016–1×1018 cm−3. Contrary to the case of n-type samples, spectral profiles of the LO-phonon-plasmon coupled mode in p-type show no remarkable change with the hole density. Thus, precise evaluation of electrical transport parameters such as carrier density and mobility from the coupled mode profile is difficult. However, a continuum band has been observed in the low-frequency range of the spectra, becoming intense with the increase of the hole density. This band has been attributed to the inter-valence-band transition of holes, and the intensity can be used as a good measure of the hole density. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122348
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