Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1808-1810
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was determined to be close to 100 nm in diameter. Despite the large defect density, a strong room temperature photoluminescence signal with a full width at half maximum of 138 meV was observed from these samples. The surface exhibited random array of sharp tips at the microscopic level with about 5×109 tips/cm2 density. The field emission characteristics of the as-grown thin films were measured, and a threshold electric field as low as 30–40 V/μm and an emission current density of more than 100 mA/cm2 were obtained. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122289
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
