ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxially grown isotopically enriched Si layers have been used to study self-diffusion in Si directly at the temperatures of 1000 and 1100 °C. We obtain equilibrium diffusion coefficients in accordance with previous experiments and theoretical calculations. Comparison of diffusion data of self-, antimony, and phosphorus diffusion in Si under identical conditions of perturbed self-interstitial and vacancy concentrations created by surface reactions enables us to determine the microscopic mechanisms of Si self-diffusion. We find that, in this temperature range, self-interstitials contribute roughly 2/3 to Si self-diffusion, and vacancies 1/3, with the concerted exchange component being less than 14%. This constitutes direct experimental evidence that, on the atomic scale, self-diffusion in Si is mediated both by self-interstitials and vacancies. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122252
