Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1574-1576
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Implantation of Au ions into Si-implanted fused quartz strongly enhances the photoluminescence (PL) intensity around 630 nm measured after subsequent sample annealing at 900 °C. This effect is attributed to the enhancement of the formation of Si nanocrystals by the presence of Au ions and not by ion-implantation-induced defects. This conclusion was deduced by monitoring the defect formation in fused silica by 2 MeV Si ion implantation with doses ranging from 2×1016 to 1×1017 Si/cm2. Some of the 4×1016 Si/cm2-implanted samples were reimplanted at a similar depth with 10 MeV Au ions at doses of 4×1016 and 1.2×1017 Au/cm2. The absorption spectroscopy, electron paramagnetic resonance and PL measurements show the presence of B2 and E′ matrix point defects in as-prepared Si-implanted samples. As these defects disappear after annealing at 600 °C, the presence of a strong PL peak in samples implanted and annealed at 900 °C strongly suggests that the observed luminescence is produced by Si nanoparticle formation. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122208
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