Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 356-358
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120735
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