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A metal/oxide tunneling transistor (1998)

Snow, E. S. ; Campbell, P. M. ; Rendell, R. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 3071-3073

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated a nanometer-scale transistor that operates by using a gate field to modulate the transmission of electrons through a lateral metal/oxide tunnel barrier. Our initial devices have a 30-nm-wide lateral Nb/NbOx tunnel junction on top of a planar Al2O3/Al buried gate. We observe effective modulation of the source–drain current with gate bias at room temperature with negligible gate leakage current. We identify the materials issues that currently limit the device performance, and we offer direction for future device improvements.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121544

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