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Measurements of thermal transport in low stress silicon nitride films (1998)

Holmes, W. ; Gildemeister, J. M. ; Richards, P. L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 2250-2252

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have measured the thermal conductance, G, of (approximate)1 μm thick low stress silicon nitride membranes over the temperature range, 0.06〈T〈6 K, as a function of surface condition. For T〉4 K, G is independent of surface condition indicating that the thermal transport is determined by bulk scattering. For T〈4 K, scattering from membrane surfaces becomes significant. Membranes which have submicron sized Ag particles glued to the surface or are micromachined into narrow strips have a G that is reduced by a factor as large as 5 compared with that of clean, solid membranes with the same ratio of cross section to length. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.121269

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