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Granular Fe–Pb–O films with large tunneling magnetoresistance (1998)

Huang, Yi-Hong ; Hsu, Jen-Hwa ; Chen, J. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 2171-2173

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A method of manufacturing granular Fe–Pb–O films is described. The temperature dependence of resistivity in these samples exhibits a semiconductorlike behavior indicating that the electronic transport takes place via a tunneling process. The magnetoresistance ratio has been found to be about 10% at room temperature. The enhancement of the tunneling magnetoresistance effect is believed to be due to spin-dependent tunneling through the tunneling barrier containing magnetic ferrite formed by PbO and α-Fe2O3. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121311

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