Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1439-1441
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the mechanisms of optical gain in cubic GaN. Intensity-dependent gain spectra allow a distinction of the processes involved in providing optical amplification. For moderate excitation levels, the biexciton decay is responsible for a gain structure at 3.265 eV. With increasing excitation densities, gain is observed on the high energy side of the cubic band gap due to band filling processes. For the highest pump intensities, the electron-hole plasma is the dominant gain process. Gain values up to 210 cm−1 were obtained, indicating the high potential of cubic GaN for device applications. The observed gain mechanisms are similar to those of hexagonal GaN. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120588
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