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Si1−yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy (1997)

Joelsson, K. B. ; Ni, W.-X ; Pozina, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 653-655

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Preparation of pseudomorphic Si1−yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high-temperature cell has been studied. Thick ((approximate)2000 Å) homogenous Si1−yCy layers, y≤1.5%, and Si1−yCy/Si multiple quantum well (MQW) structures, y≤8%, have been prepared. There is a growth temperature dependent surface roughness accumulating during the growth sequence that can lead to reduction of C induced strain. Temperature modulation during growth has been used to suppress this effect. Near band gap photoluminescence is reported from Si1−yCy/Si MQW structures. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119819

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