Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 494-496
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have successfully used a thin layer (∼200 Å) of annealed low-temperature GaAs (LT-GaAs) to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Compared to structures without an ion damage blocking layer, the devices with a thin layer of LT-GaAs are more robust against ion damage. This is important for the application of ion-assisted processing to the fabrication of electronic devices, such as dry etching used to achieve gate recessing. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119608
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