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Digitale Medien

Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy (1997)

Gwo, S. ; Tokumoto, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 362-364

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In situ scanning tunneling microscopy and time-resolved reflection high-energy electron diffraction measurements were performed to study the nitridation process of the As-terminated GaAs(001)-(2×4) surface by using electron cyclotron resonance plasma-assisted molecular-beam epitaxy. We report the real-space atomic structure of the coherently strained (3×3)-ordered GaN monolayer on GaAs(001) after a limited-exposure nitridation process and the atomically smooth morphology of this nitrided surface. The unique (3×3) phase is found consisting of nitrogen dimers and a regular array of missing nitrogen rows in both [1¯10] and [110] directions.© 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.119538

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