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A work-hardening based model of the strain relief in multilayer graded-buffer structures (1997)

González, D. ; Araújo, D. ; Aragón, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 3099-3101

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This paper describes the modeling of the dislocation distribution and of the strain relief in linearly and step-graded structures, based on work-hardening considerations. The model considers the energy variation in an InGaAs/GaAs system upon introducing a new dislocation into the interfacial fixed array of misfit dislocations. An analytical expression for the strain relaxation in graded-buffer structures is proposed. Transmission electron microscopy observation confirms the model predictions and reveals that the saturation state of relaxation is reached in the buried layers. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120258

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