Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1969-1971
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report results on an improved growth process for cubic boron nitride (c-BN) films. The films are deposited on a dc-biased silicon substrate using ion-assisted sputtering. First, we grow a BN template layer at a bias voltage which maximizes the sp3 content. After this template layer attains a thickness of ∼500 Å, corresponding to the coalescence of the mosaiclike grain structure, we find that we can reduce the substrate bias to about 50% of its initial value while sustaining pure phase c-BN growth. The reduction in nitrogen ion energy results in a dramatic increase in the growth rate as well as significantly improved film quality. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119429
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