ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Formation of buried p-type conducting layers in diamond (1997)

Walker, R. ; Prawer, S. ; Jamieson, D. N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 1492-1494

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Deeply buried boron doped layers are realized in single crystal diamond using MeV ion implantation. Contact to the buried layers is accomplished using pulsed focused laser irradiation which is selectively absorbed in the implanted layer to form a graphite column up to the surface. The contacts are ohmic over a wide range of applied voltage. Implantation induced defects that are responsible for compensation of the acceptors are identified. It is found that removal of these defects requires annealing temperatures of about 1450 °C, but once these defects are removed the buried B doped layer displays excellent activation of the acceptors with an activation energy of 0.372 eV. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119946

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit