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Optical transition in SiGe self-organized dots (1997)

Chen, H. ; Cheng, W. Q. ; Xie, X. G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 446-448

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer during the growth of a strained Si/Ge short period superlattice on a Si(001) substrate at a temperature of 800 °C by molecular beam epitaxy. The peak of photoluminescence from the quantum dots is at an energy higher than the band gap of Si. The intensity is two orders of magnitude higher than that of SiGe/Si quantum well. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118177

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