Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 2888-2890
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transmission electron microscopy studies of low indium composition InxGa1−xAs insertions (x〈0.4) in a GaAs matrix deposited by molecular beam epitaxy or by metal-organic chemical vapor deposition reveal nanoscale quasiperiodic compositional and morphological modulations. The luminescence peak wavelength is found to be a strong function of deposition parameters and can be tuned from 1.1 to 1.3 μm for the same x and average thickness of the deposit. Strained (In, Ga, Al)As lasers with such a laterally modulated InxGa1−xAs active region demonstrate significant depolarization of the electroluminescence. For short cavity length, lasing occurs at energies corresponding to transitions between InxGa1−xAs conduction band and light holelike valence band states. Devices lase at low threshold current densities and demonstrate continuous wave operation up to 3 W at room temperature. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119032
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