Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1296-1298
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Phase images of 20–30-nm-diam silicon spheres were collected by holographic methods in a field-emission transmission electron microscope. The spherical geometry enables the effect of specimen thickness on the electron-wave phase to be separated from the intrinsic Si electron-optical refractive effects allowing a determination of the mean inner potential Φ0. This work finds Φ0=11.9±0.9 V characterizing amorphous Si and 12.1±1.3 V characterizing crystalline Si. The phase images can resolve a 2-nm-thick native oxide layer and give Φ0 for SiO2=10.1±0.6 V. The phase data can quickly recognize a surface layer, and the effect of a surface layer on the determination of the bulk mean potential can be minimized. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118556
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